Controlling surface/interface states in GaN-based transistors: Surface model, insulated gate, and surface passivation
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چکیده
منابع مشابه
Surface passivation of GaN and GaNÕAlGaN heterostructures by dielectric films and its application to insulated-gate heterostructure transistors
Title Surface passivation of GaN and GaN/AlGaN heterostructures by dielectric films and its application to insulated-gate heterostructure transistors Author(s) Hashizume, Tamotsu; Ootomo, Shinya; Inagaki, Takanori; Hasegawa, Hideki Citation Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 21(4): 18281838 Issue Date 2003-08-05 Doc URL http://hdl.handle.net/211...
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2021
ISSN: 0021-8979,1089-7550
DOI: 10.1063/5.0039564